TCAD/DA for MPU and ASIC Development

نویسندگان

  • Hiroo Masuda
  • Katsumi Tsuneno
  • Hisako Sato
  • Kazutaka Mori
چکیده

Abstract--We have proposed, in this paper a, TCAD/DA methodology for MPU and ASIC with updated processes and devises, which allow a predictive chip-design with quick quantitative correlation studies between process-recipe and CKT & delay parameters required in DA works. Effects of statistical process variation on 0.35um CMOS have been rigorously characterized with a new global TCAD calibration technique. Based on the data, process variation effects on a 0.25um CMOS have been predicted, which is concluded that the Vth and Ids total-variation of the 0.25um CMOS shows less than 10% in production process, which is similar with that of the 0.35um CMOS.

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تاریخ انتشار 1998